The mechanism of action of the compound center
The recombination through the recombination center is an indirect recombination process. This recombination process is the basic process that determines the lifetime of minority carriers in indirect energy band structure semiconductors such as Si and Ge. The impurities in the recombination center are often metal elements with small atomic radius, which can easily enter the semiconductor; therefore, in order to ensure that the minority carriers have a long enough life, special attention should be paid to the cleanliness in the process of making the device. To ensure that the impurities in the compound center will not cause pollution.