Introduction to reverse saturation current
The reverse saturation current means that when a reverse bias voltage is applied to the Schottky barrier, the applied voltage makes its depletion layer wider, the built-in electric field becomes larger, and the potential energy of electrons increases, and the majority of the P and N regions Carriers (mostly holes in the P area and electrons in the N area) are difficult to cross the barrier, so the diffusion current approaches zero, but due to the increase in the junction electric field, the minority carriers in the N and P areas It is easier to produce drifting motion.